Investigation of reactive HiPIMS + MF sputtering of TiO2 crystalline thin films
Identifieur interne : 000995 ( Main/Repository ); précédent : 000994; suivant : 000996Investigation of reactive HiPIMS + MF sputtering of TiO2 crystalline thin films
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Abstract
A hybrid high-power impulse magnetron sputtering (HiPIMS) + mid-frequency (MF) magnetron sputtering system was used for the deposition of crystalline TiO2 thin films at a low substrate temperature. Ion velocity distribution functions (IVDFs) were measured in a pulsed magnetron discharge at substrate positions depending on the type of plasma excitation and on the working gas mixtures. Several different pulsed discharge configurations were used: (i) HiPIMS, (ii) pulsed bipolar MF with frequency 350 kHz and (iii) both HiPIMS + MF connected in parallel to the magnetron cathode. The timing of HiPIMS excitation was set to period time T = 10 ms with "ON" time TON = 100 μs. Ti targets were sputtered in three different types of atmospheres: (i) inert pure Ar, (ii) a reactive mixture of Ar + O2 and (iii) a reactive mixture of Ar + O2 + N2 with a constant gas pressure p = 1 Pa. All IVDFs were measured using a time-resolved retarding field energy analyzer (RFEA) located in the substrate position. TiO2 thin films were deposited under identical experimental conditions on silica (SiO2) glass substrate, glass with an indium tin oxide (ITO) electrode and polycarbonate polymer foil. The thin film properties are discussed with respect to the measured plasma parameters. It is shown that the combination of HiPIMS + MF excitation in a reactive atmosphere effectively reduces the delay between the edge of cathode voltage and current onset. The highest ion energy was reached in the case of an inert Ar atmosphere due to the highest ratio of fast Ti+ ions in the overall ion flux. All TiO2 thin films deposited in reactive atmospheres formed pure rutile phase regardless of the excitation mode; however, those films deposited by a HiPIMS + MF excitation mode exhibited the greatest ability to produce a photocurrent. Furthermore, HiPIMS + MF was the best setting for the deposition of crystalline TiO2 on polycarbonate foil because of the low heating flux on the substrate and suitable plasma parameters leading to the formation of the rutile phase.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Investigation of reactive HiPIMS + MF sputtering of TiO<sub>2</sub> crystalline thin films</title><author><name sortKey="Olejnicek, J" uniqKey="Olejnicek J">J. Olejnicek</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2</s1><s2>182 21 Prague</s2><s3>CZE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>République tchèque</country><wicri:noRegion>182 21 Prague</wicri:noRegion></affiliation></author><author><name sortKey="Hubicka, Z" uniqKey="Hubicka Z">Z. Hubicka</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2</s1><s2>182 21 Prague</s2><s3>CZE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>République tchèque</country><wicri:noRegion>182 21 Prague</wicri:noRegion></affiliation></author><author><name sortKey="Kment, S" uniqKey="Kment S">S. Kment</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2</s1><s2>182 21 Prague</s2><s3>CZE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>République tchèque</country><wicri:noRegion>182 21 Prague</wicri:noRegion></affiliation></author><author><name sortKey="Cada, M" uniqKey="Cada M">M. Cada</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2</s1><s2>182 21 Prague</s2><s3>CZE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>République tchèque</country><wicri:noRegion>182 21 Prague</wicri:noRegion></affiliation></author><author><name sortKey="Ksirova, P" uniqKey="Ksirova P">P. Ksirova</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2</s1><s2>182 21 Prague</s2><s3>CZE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>République tchèque</country><wicri:noRegion>182 21 Prague</wicri:noRegion></affiliation></author><author><name sortKey="Adamek, P" uniqKey="Adamek P">P. Adamek</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2</s1><s2>182 21 Prague</s2><s3>CZE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>République tchèque</country><wicri:noRegion>182 21 Prague</wicri:noRegion></affiliation></author><author><name sortKey="Gregora, I" uniqKey="Gregora I">I. Gregora</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2</s1><s2>182 21 Prague</s2><s3>CZE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>République tchèque</country><wicri:noRegion>182 21 Prague</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0350760</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0350760 INIST</idno><idno type="RBID">Pascal:13-0350760</idno><idno type="wicri:Area/Main/Corpus">000531</idno><idno type="wicri:Area/Main/Repository">000995</idno></publicationStmt><seriesStmt><idno type="ISSN">0257-8972</idno><title level="j" type="abbreviated">Surf. coat. technol.</title><title level="j" type="main">Surface & coatings technology</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Reactive sputtering</term><term>Sputtering</term><term>Surface treatments</term><term>Thin films</term><term>Titanium oxide</term><term>Velocity</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Pulvérisation réactive</term><term>Pulvérisation irradiation</term><term>Oxyde de titane</term><term>Couche mince</term><term>Vitesse</term><term>Traitement surface</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A hybrid high-power impulse magnetron sputtering (HiPIMS) + mid-frequency (MF) magnetron sputtering system was used for the deposition of crystalline TiO<sub>2</sub> thin films at a low substrate temperature. Ion velocity distribution functions (IVDFs) were measured in a pulsed magnetron discharge at substrate positions depending on the type of plasma excitation and on the working gas mixtures. Several different pulsed discharge configurations were used: (i) HiPIMS, (ii) pulsed bipolar MF with frequency 350 kHz and (iii) both HiPIMS + MF connected in parallel to the magnetron cathode. The timing of HiPIMS excitation was set to period time T = 10 ms with "ON" time T<sub>ON</sub> = 100 μs. Ti targets were sputtered in three different types of atmospheres: (i) inert pure Ar, (ii) a reactive mixture of Ar + O<sub>2</sub> and (iii) a reactive mixture of Ar + O<sub>2</sub> + N<sub>2</sub> with a constant gas pressure p = 1 Pa. All IVDFs were measured using a time-resolved retarding field energy analyzer (RFEA) located in the substrate position. TiO<sub>2</sub> thin films were deposited under identical experimental conditions on silica (SiO<sub>2</sub>) glass substrate, glass with an indium tin oxide (ITO) electrode and polycarbonate polymer foil. The thin film properties are discussed with respect to the measured plasma parameters. It is shown that the combination of HiPIMS + MF excitation in a reactive atmosphere effectively reduces the delay between the edge of cathode voltage and current onset. The highest ion energy was reached in the case of an inert Ar atmosphere due to the highest ratio of fast Ti<sup>+</sup> ions in the overall ion flux. All TiO<sub>2</sub> thin films deposited in reactive atmospheres formed pure rutile phase regardless of the excitation mode; however, those films deposited by a HiPIMS + MF excitation mode exhibited the greatest ability to produce a photocurrent. Furthermore, HiPIMS + MF was the best setting for the deposition of crystalline TiO<sub>2</sub> on polycarbonate foil because of the low heating flux on the substrate and suitable plasma parameters leading to the formation of the rutile phase.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0257-8972</s0></fA01><fA02 i1="01"><s0>SCTEEJ</s0></fA02><fA03 i2="1"><s0>Surf. coat. technol.</s0></fA03><fA05><s2>232</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Investigation of reactive HiPIMS + MF sputtering of TiO<sub>2</sub> crystalline thin films</s1></fA08><fA11 i1="01" i2="1"><s1>OLEJNICEK (J.)</s1></fA11><fA11 i1="02" i2="1"><s1>HUBICKA (Z.)</s1></fA11><fA11 i1="03" i2="1"><s1>KMENT (S.)</s1></fA11><fA11 i1="04" i2="1"><s1>CADA (M.)</s1></fA11><fA11 i1="05" i2="1"><s1>KSIROVA (P.)</s1></fA11><fA11 i1="06" i2="1"><s1>ADAMEK (P.)</s1></fA11><fA11 i1="07" i2="1"><s1>GREGORA (I.)</s1></fA11><fA14 i1="01"><s1>Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2</s1><s2>182 21 Prague</s2><s3>CZE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA20><s1>376-383</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>15987</s2><s5>354000504242830500</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>37 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0350760</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Surface & coatings technology</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>A hybrid high-power impulse magnetron sputtering (HiPIMS) + mid-frequency (MF) magnetron sputtering system was used for the deposition of crystalline TiO<sub>2</sub> thin films at a low substrate temperature. Ion velocity distribution functions (IVDFs) were measured in a pulsed magnetron discharge at substrate positions depending on the type of plasma excitation and on the working gas mixtures. Several different pulsed discharge configurations were used: (i) HiPIMS, (ii) pulsed bipolar MF with frequency 350 kHz and (iii) both HiPIMS + MF connected in parallel to the magnetron cathode. The timing of HiPIMS excitation was set to period time T = 10 ms with "ON" time T<sub>ON</sub> = 100 μs. Ti targets were sputtered in three different types of atmospheres: (i) inert pure Ar, (ii) a reactive mixture of Ar + O<sub>2</sub> and (iii) a reactive mixture of Ar + O<sub>2</sub> + N<sub>2</sub> with a constant gas pressure p = 1 Pa. All IVDFs were measured using a time-resolved retarding field energy analyzer (RFEA) located in the substrate position. TiO<sub>2</sub> thin films were deposited under identical experimental conditions on silica (SiO<sub>2</sub>) glass substrate, glass with an indium tin oxide (ITO) electrode and polycarbonate polymer foil. The thin film properties are discussed with respect to the measured plasma parameters. It is shown that the combination of HiPIMS + MF excitation in a reactive atmosphere effectively reduces the delay between the edge of cathode voltage and current onset. The highest ion energy was reached in the case of an inert Ar atmosphere due to the highest ratio of fast Ti<sup>+</sup> ions in the overall ion flux. All TiO<sub>2</sub> thin films deposited in reactive atmospheres formed pure rutile phase regardless of the excitation mode; however, those films deposited by a HiPIMS + MF excitation mode exhibited the greatest ability to produce a photocurrent. Furthermore, HiPIMS + MF was the best setting for the deposition of crystalline TiO<sub>2</sub> on polycarbonate foil because of the low heating flux on the substrate and suitable plasma parameters leading to the formation of the rutile phase.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A65</s0></fC02><fC02 i1="02" i2="X"><s0>001D11C06</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A15</s0></fC02><fC02 i1="04" i2="X"><s0>240</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Pulvérisation réactive</s0><s5>55</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Reactive sputtering</s0><s5>55</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Pulvérisation irradiation</s0><s5>56</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Sputtering</s0><s5>56</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Oxyde de titane</s0><s5>57</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Titanium oxide</s0><s5>57</s5></fC03><fC03 i1="03" i2="X" l="GER"><s0>Titanoxid</s0><s5>57</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Titanio óxido</s0><s5>57</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Couche mince</s0><s5>58</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Thin films</s0><s5>58</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Vitesse</s0><s5>59</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Velocity</s0><s5>59</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Traitement surface</s0><s5>60</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Surface treatments</s0><s5>60</s5></fC03><fN21><s1>329</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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